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P‐9: Reduction and Mechanism of ESD Defect in IGZO‐TFT Formation
Author(s) -
Liu Tianzhen,
Duan Xianxue,
Xu Dezhi,
Cui Haifeng,
Zhang Zhihai,
Youn YangSik,
Chen Junsheng,
Lee SeungKyu
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13158
Subject(s) - thin film transistor , mechanism (biology) , materials science , optoelectronics , reduction (mathematics) , electrostatic discharge , electrical engineering , nanotechnology , engineering , voltage , physics , layer (electronics) , mathematics , geometry , quantum mechanics
In this paper, “IGZO deposition” and “IGZO Photo” are found to be the critical steps that occurs for ESD in Oxide TFTs. The mechanism of ESD has been studied, furthermore, several improvement methods has been proposed.