P‐4: High‐Mobility Back‐Channel‐Etched IGZTO‐TFT and Application to Dual‐Gate Structure | Zendy

Nakata Mitsuru | Zendy; Ochi Mototaka | Zendy; Takei Tatsuya | Zendy; Tsuji Hiroshi | Zendy; Miyakawa Masashi | Zendy; Motomura Genichi | Zendy; Goto Hiroshi | Zendy; Fujisaki Yoshihide | Zendy

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P‐4: High‐Mobility Back‐Channel‐Etched IGZTO‐TFT and Application to Dual‐Gate Structure

Author(s) -

Nakata Mitsuru,

Ochi Mototaka,

Takei Tatsuya,

Tsuji Hiroshi,

Miyakawa Masashi,

Motomura Genichi,

Goto Hiroshi,

Fujisaki Yoshihide

Publication year - 2019

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.13153

Subject(s) - thin film transistor , fabrication , materials science , optoelectronics , transistor , channel (broadcasting) , dual (grammatical number) , electron mobility , electrical engineering , nanotechnology , layer (electronics) , engineering , voltage , medicine , art , alternative medicine , literature , pathology

This work developed a back‐channel‐etched In‐Ga‐Zn‐Sn‐O (IGZTO) thin‐film transistor (TFT) with a high mobility of 41 cm 2 /Vs by optimizing both the IGZTO composition and the fabrication process. Furthermore, an effective mobility of 99 cm 2 /Vs was achieved for an IGZTO‐TFT with a dual‐gate structure.

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