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P‐4: High‐Mobility Back‐Channel‐Etched IGZTO‐TFT and Application to Dual‐Gate Structure
Author(s) -
Nakata Mitsuru,
Ochi Mototaka,
Takei Tatsuya,
Tsuji Hiroshi,
Miyakawa Masashi,
Motomura Genichi,
Goto Hiroshi,
Fujisaki Yoshihide
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13153
Subject(s) - thin film transistor , fabrication , materials science , optoelectronics , transistor , channel (broadcasting) , dual (grammatical number) , electron mobility , electrical engineering , nanotechnology , layer (electronics) , engineering , voltage , medicine , art , alternative medicine , literature , pathology
This work developed a back‐channel‐etched In‐Ga‐Zn‐Sn‐O (IGZTO) thin‐film transistor (TFT) with a high mobility of 41 cm 2 /Vs by optimizing both the IGZTO composition and the fabrication process. Furthermore, an effective mobility of 99 cm 2 /Vs was achieved for an IGZTO‐TFT with a dual‐gate structure.