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P‐1: Novel Oxide TFT Technology for Ultra‐high Definition and Super‐narrow Border Notebook Displays
Author(s) -
Dai Chao,
Zhao Wenda,
Ren Yangyang,
Huang Hongtao,
Wang Zhijun
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13150
Subject(s) - thin film transistor , optoelectronics , materials science , oxide , electrical engineering , channel (broadcasting) , threshold voltage , voltage , transistor , nanotechnology , engineering , metallurgy , layer (electronics)
It is demonstrated that novel back‐channel‐etch type oxide TFTs (InGaZnSnOx target material for oxide semiconductor) with below 10% threshold voltage uniformity, better stability and above 10cm 2 /V·s electron mobility in G4.5 factory. From etch‐stop type to back‐channel‐etch type, ultra‐high definition 15.6 inch notebook display with only 1.2mm left and right border has designed and manufactured for the first time by the way of singleside gate driver in panel.