Premium
69‐3: Distinguished Paper: Large‐Area Spatial Atomic Layer Deposition of Amorphous Oxide Semiconductors at Atmospheric Pressure
Author(s) -
Katsouras Ilias,
Frijters Corné,
Poodt, Paul,
Gelinck Gerwin,
Kronemeijer Auke Jisk
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13090
Subject(s) - atomic layer deposition , materials science , thin film transistor , deposition (geology) , layer (electronics) , amorphous solid , optoelectronics , planar , atmospheric pressure , oxide , thin film , transistor , nanotechnology , metallurgy , chemistry , electrical engineering , crystallography , computer science , engineering , paleontology , computer graphics (images) , oceanography , sediment , geology , biology , voltage
Indium Gallium Zinc Oxide (IGZO) films are deposited using plasma‐enhanced spatial Atomic Layer Deposition (sALD) on substrates as large as 32 cm x 35 cm. Excellent uniformity and thickness control leads to high‐performing and stable co‐planar top‐gate self‐aligned (SA) thin‐film transistors (TFTs), demonstrating the viability of atmospheric spatial ALD as a novel deposition technique for the flat‐panel display industry.