69‐3:  Distinguished Paper:  Large‐Area Spatial Atomic Layer Deposition of Amorphous Oxide Semiconductors at Atmospheric Pressure | Zendy

Katsouras Ilias | Zendy; Frijters Corné | Zendy; Poodt, Paul | Zendy; Gelinck Gerwin | Zendy; Kronemeijer Auke Jisk | Zendy

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69‐3: Distinguished Paper: Large‐Area Spatial Atomic Layer Deposition of Amorphous Oxide Semiconductors at Atmospheric Pressure

Author(s) -

Katsouras Ilias,

Frijters Corné,

Poodt, Paul,

Gelinck Gerwin,

Kronemeijer Auke Jisk

Publication year - 2019

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.13090

Subject(s) - atomic layer deposition , materials science , thin film transistor , deposition (geology) , layer (electronics) , amorphous solid , optoelectronics , planar , atmospheric pressure , oxide , thin film , transistor , nanotechnology , metallurgy , chemistry , electrical engineering , crystallography , computer science , engineering , paleontology , computer graphics (images) , oceanography , sediment , geology , biology , voltage

Indium Gallium Zinc Oxide (IGZO) films are deposited using plasma‐enhanced spatial Atomic Layer Deposition (sALD) on substrates as large as 32 cm x 35 cm. Excellent uniformity and thickness control leads to high‐performing and stable co‐planar top‐gate self‐aligned (SA) thin‐film transistors (TFTs), demonstrating the viability of atmospheric spatial ALD as a novel deposition technique for the flat‐panel display industry.

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