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62‐1: Invited Paper: Highly Stable Self‐Aligned Coplanar InGaZnO Thin‐Film Transistors and Investigation on Effective Channel Length †
Author(s) -
Kim Jung Bae,
Lim Rodney,
Tsai Yun-chu Pipi,
Wang Jiarui,
Zhao Lai,
Choi Soo Young,
Bender Marcus,
Yim Dong Kil
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13061
Subject(s) - thin film transistor , threshold voltage , materials science , optoelectronics , transistor , channel (broadcasting) , voltage , nanotechnology , electrical engineering , layer (electronics) , engineering
Highly stable top‐gate InGaZnO (IGZO) thin‐film transistors (TFTs) with excellent threshold voltage (Vth) uniformity are developed by optimizing gate insulator film properties and controlling oxygen/hydrogen diffusion into IGZO channel. The TFTs do not show notable negative Vth shift and Vth non‐uniformity from channel length 10 µm down to 3 µm.
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