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60‐2: Panel Design Technology for a 31‐inch GOA Drived AMOLED Display with BYYB OLED Structure and Slim Border
Author(s) -
Xue Yan,
Fang Chun-Hsiung,
Han Bai-Xiang,
Tu Ai-Guo,
Yang Zhong-Guo,
Chaw Gary,
Liao Cong-Wei,
Zhang Sheng-Dong,
Wu Yuan-Chun,
Lu Po-Yen
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13054
Subject(s) - amoled , thin film transistor , oled , materials science , optoelectronics , amorphous solid , electronic circuit , transistor , electrical engineering , nanotechnology , engineering , crystallography , chemistry , active matrix , layer (electronics) , voltage
A much complicated structure, where GOA circuits were placed at the bottom side, was proposed for a 31‐inch AMOLED display. This structure contributed significantly to border reduction and reliability improvement. What's more, amorphous‐indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film‐transistors (TFTs) with top‐gate structure exhibited high performance and the GOA circuits could operate well.