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47‐3: AMQLED Display with Highly Efficient Oxide N‐P Charge Generation Junction
Author(s) -
Kim Jeonggi,
Kim Hyo-Min,
Lee Suhui,
Avis Christophe,
Jang Jin
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13003
Subject(s) - tandem , oxide , ohmic contact , current density , diode , materials science , optoelectronics , quantum efficiency , current (fluid) , charge (physics) , charge density , nanotechnology , electrical engineering , physics , metallurgy , composite material , engineering , layer (electronics) , quantum mechanics
We have developed high efficiency tandem quantum‐dot light‐emitting diode (QLED) by using oxide n‐p charge generation junction (CGJ). The tandem QLED with oxide n‐p CGJ exhibits the current efficiency as high as over 120 cd A −1 . The oxide n‐p CGJ shows good Ohmic behavior under forward and reverse bias. It is obvious that the reverse current density is nearly equal to the forward current density, which suggest the efficient charge generation in the oxide n‐p CGJ. In this work, we demonstrated a 4‐inch AMQLED display using high efficiency tandem QLED with oxide n‐p CGJ.