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39‐2: Development of Advanced LTPS TFT Technology for Low Power Consumption and Narrow Border LCDs
Author(s) -
Watakabe Hajime,
Jinnai Toshihide,
Suzumura Isao,
Hanada Akihiro,
Onodera Ryo,
Tada Masahiro,
Mochizuki Kazuhide,
Tanaka Hitoshi,
Ito Tomoyuki
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12977
Subject(s) - thin film transistor , cmos , multiplexer , materials science , power consumption , electrical engineering , optoelectronics , power (physics) , engineering , nanotechnology , physics , layer (electronics) , quantum mechanics , multiplexing
We have developed an advanced LTPS TFT technology in which top‐gate oxide TFTs are used in each pixel and CMOS LTPS TFTs are used in gate drivers and multiplexers in the peripheral circuits. Oxide TFTs have excellent I ds –V gs characteristics with a small V th shift under negative bias temperature illumination stress (NBTIS).