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37‐2: Development of high mobility top gate IGZO‐TFT for OLED display.
Author(s) -
Takeda Yujiro,
Kobayashi Shunsuke,
Murashige Shogo,
Ito Kazuatsu,
Ishida Izumi,
Nakajima Shinji,
Matsukizono Hiroshi,
Makita Naoki
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12970
Subject(s) - thin film transistor , oled , materials science , optoelectronics , transistor , threshold voltage , reliability (semiconductor) , voltage , electrical engineering , computer science , nanotechnology , engineering , physics , layer (electronics) , power (physics) , quantum mechanics
We report the high performance top gate IGZO‐TFT for OLED display. By optimizing the conditions of process, we fabricated the transistor with mobility from 7 to 32 cm 2 /Vs with enhanced threshold voltage. They also have reliability PBT/NBT enough to use application. Finally, the prototype 12.3” ultrawide flexible OLED display was successfully demonstrated.