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30‐3: High Performance All Solution Processed Oxide Thin‐Film Transistor via Photo‐induced Semiconductor‐to‐Conductor Transformation of a‐InZnO
Author(s) -
Bermundo Juan Paolo S.,
Kulchaisit Chaiyanan,
Corsino Dianne C.,
Syairah Aimi,
Fujii Mami N.,
Ikenoue Hiroshi,
Ishikawa Yasuaki,
Uraoka Yukiharu
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12946
Subject(s) - thin film transistor , fabrication , materials science , optoelectronics , semiconductor , conductor , deposition (geology) , transistor , oxide thin film transistor , transformation (genetics) , nanotechnology , electrical engineering , chemistry , layer (electronics) , composite material , engineering , voltage , medicine , paleontology , biochemistry , alternative medicine , pathology , sediment , gene , biology
We report the development of high performance all‐solution processed oxide thin‐film transistors (TFT) via selective photo‐induced semiconductor‐to‐conductor transformation of a‐InZnO. This simple method enables TFT fabrication through deposition of three main layers without additional source, drain, and gate deposition. This method has a large potential for high throughput roll‐to‐roll fabrication.