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30‐2: Top‐Gate Self‐Aligned InGaZnO TFTs with High PBTS Reliability by Employing Different H‐Incorporation Process
Author(s) -
Jiang Yun Long,
Liu Fang Mei,
Hsu Yuan Jun,
Im Jang Soon,
Fang Chun Hsiung,
Wu Yuan Chun,
Lu Po Yen
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12945
Subject(s) - backplane , materials science , oled , reliability (semiconductor) , optoelectronics , process (computing) , computer science , composite material , computer hardware , layer (electronics) , physics , power (physics) , quantum mechanics , operating system
In this paper, we have demostrated high PBTS top‐gate self‐aligned IGZO TFTs by employing different H‐incorration process. Through optimization processes, PBTS is improved to 0.29 V and Vth deviation on Gen. 4.5 glass is 0.4V. Finally, 31‐inch OLED TV employing GOA circuit applied by this optimized backplane was successfully demonstrated.