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23‐2: 2351‐ppi OLED Display with Stacked OS‐FETs with L = 0.36 µm
Author(s) -
Shishido Hideaki,
Kimura Kiyotaka,
Nomura Masumi,
Hirose Takeya,
Kato Sho,
Aoyama Tomoya,
Nomura Shiho,
Nei Kosei,
Okazaki Yutaka,
Ikeda Takayuki,
Yamazaki Shunpei
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12919
Subject(s) - oled , pixel , optoelectronics , diode , transistor , materials science , field effect transistor , semiconductor , channel (broadcasting) , electrical engineering , physics , voltage , optics , nanotechnology , engineering , layer (electronics)
A 2351‐ppi organic light‐emitting diode (OLED) display incorporating memories in pixels is proposed. Each pixel contains stacked oxide semiconductor (OS) field‐effect transistors (FETs) (with a channel length of 0.36 μm), which are used to create the memory in the pixel.