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16‐3: Investigation of Mechanical Stress and Gate Bias Stress on Flexible Dual‐gate a‐IGZO Thin Film Transistors
Author(s) -
Yang Jianwen,
Zhang Qun,
Chang Ting-Chang,
Liao Po-Yung
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12893
Subject(s) - materials science , thin film transistor , stress (linguistics) , layer (electronics) , substrate (aquarium) , optoelectronics , passivation , transistor , ultimate tensile strength , composite material , electrical engineering , engineering , linguistics , philosophy , oceanography , voltage , geology
The effects of mechanical stress and gate bias stress on dual‐gate a‐IGZO thin‐film transistors on a flexible substrate were investigated. Both tensile and compressive stresses increased free electrons and deep states in a‐IGZO. More deep defects will be formed under strong tensile stress, while small compressive stress can repair defects in the relatively poor quality etch‐stop layer. Moisture still influence the stability even for the TFTs with etch stop layer and passivation layer under gate bias stress test.