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16‐2: Remarkable Improvement of Electro‐Mechanical Stabilities in Flexible Oxide TFTs under Bulk‐Accumulation Operation
Author(s) -
Billah Mohammad Masum,
Jang Jin
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12892
Subject(s) - materials science , limiting , substrate (aquarium) , optoelectronics , oxide , polyimide , stability (learning theory) , electron , electronic engineering , nanotechnology , computer science , engineering , mechanical engineering , layer (electronics) , physics , metallurgy , oceanography , machine learning , geology , quantum mechanics
We demonstrate highly‐robust flexible dual‐gate (DG) a‐IGZO TFTs on polyimide (PI) substrate. DG‐driving TFTs exhibit robust mechanical stability as compared to SG‐driving, which might be originated from the strain‐limiting top‐gate (TG) that efficiently modulates neutral‐plane (NP). TCAD simulation confirms the improved stability of DG‐TFTs due to smaller strain and increased electron concentration in a‐IGZO channel than SG‐driving TFTs.