Premium
16‐1: The role of hydrogen and surface potential in the performance and stability of poly‐Si TFTs on plastic substrates
Author(s) -
Lee Jaeseob,
Kim Keunwoo,
Choi Sanggun,
Jo Gyoochul,
Lee Yongsu,
Chu Hyeyong,
Kwag Jinoh
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12891
Subject(s) - materials science , hysteresis , thin film transistor , trapping , optoelectronics , stability (learning theory) , nanotechnology , condensed matter physics , physics , computer science , ecology , layer (electronics) , biology , machine learning
In this work, we report that H in poly‐Si and surface potential in channel play a critical role in the performance and stability of LTPS TFTs. We increased H contents in poly‐Si film from 0.059 to 0.061 atom% resulting in the decrease of the fast state trap density from 4.9~5.8 × 10 10 /cm 2 to 3.6~4.6 × 10 10 /cm 2 . Also, we increased surface potential by applying the appropriate back gate bias in TFTs, resulting in the more reduction of effective trap state density down to 1.7~2.0 × 10 10 /cm 2 . This resulted in the increase of the field effect mobility up to 115.4cm 2 /V·sec and decrease of hysteresis below 0.1V. We implemented these technologies into our flexible AMOLED panel.