Premium
9‐1: Invited Paper: Metal‐oxide readout electronics based on Indium‐Gallium‐Zinc‐Oxide and Indium‐Tin‐Zinc‐Oxide for in‐panel fingerprint detection application
Author(s) -
Papadopoulos Nikolaos,
Steudel Soeren,
Smout Steve,
Willegems Myriam,
Nag Manoj,
Ameys Marc,
Kronemeijer Auke Jisk,
Heremans Paul,
Myny Kris
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12863
Subject(s) - thin film transistor , transistor , materials science , indium tin oxide , indium , optoelectronics , zinc , amplifier , electronics , oxide , electrical engineering , electronic engineering , cmos , nanotechnology , engineering , voltage , thin film , layer (electronics) , metallurgy
This work describes integrated readout electronics for on‐panel fingerprint detection, focusing on two key building blocks: charge sense amplifier (CSA) and analog‐to‐digital converter (ADC). The CSA has been realized in a dual‐gate self‐aligned IGZO thin‐film transistor (TFT) technology with channel length downsizing to 3µm, enabling 1.3mm bezel size for the peripheral readout electronics and 1fps readout of a 1‐Mpixel 500dpi sensor array. The ADC has been realized in two different transistor technologies, IGZO and Indium‐Tin‐Zinc‐Oxide (ITZO). The ITZO ADC achieves a sampling rate of 1kS/s, which is 7.5x faster compared to the IGZO ADC, due to the larger mobility of ITZO.