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P‐13.2: AMOLED Encapsulation Technology and Prospect
Author(s) -
Ao Wei,
Li Chunhong,
Wang Yan,
Liu Xiangchao,
Xin Xiaogang,
Gao Feng,
Peng Chaochi,
Zhang Jianhua
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12829
Subject(s) - oled , atomic layer deposition , plasma enhanced chemical vapor deposition , materials science , encapsulation (networking) , amoled , plasma , diode , nanotechnology , optoelectronics , chemical vapor deposition , thin film , computer science , thin film transistor , active matrix , layer (electronics) , computer network , physics , quantum mechanics
The flexible organic light emitting diodes (OLEDs) has attracted a lot of attention because of its very wide and promising application prospect. The flexible encapsulation is a most problem for mass production of flexible OLEDs since their sensitivity to water and oxygen. Traditional flexible encapsulation using plasma enhanced chemical vapor deposition (PECVD) film as the inorganic layer. However owing to the complicated pattern of sub‐layer and particles, the poor step coverage of PECVD film results in bad encapsulation properties. Therefore the plasma enhanced atomic layer deposition (PEALD) is studied on account of its better step coverage and lower growth temperature. Firstly, the PECVD SiNx process has been researched to achieve the low water vapor transmission rate (WVTR) (WVTR<5*10‐4g m‐2day‐1) and low stress (<‐300MPa). Then we design several flexible encapsulation films with multilayer structures. The PEALD SiOx film is critical in the multilayer encapsulation films to obtain flexible OLED devices with the best air‐stability . Through evaluation of the pass rate after 60oC 90% RH and 85 oC 85% RH for 240h, best structure of flexible encapsulation films has been selected and used in our product.