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P‐9.6: Ultrathin Indium selenide (In 2 Se 3 ) thin films and field‐effect transistors for active matrix addressable Micro‐LEDs
Author(s) -
Wang Heshen,
Liu Qiye,
Feng Xuemeng,
Deng Aiying,
Dai Junfeng,
Liu Zhaojun
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12812
Subject(s) - materials science , optoelectronics , active matrix , substrate (aquarium) , wafer , indium , transistor , thin film transistor , fabrication , selenide , field effect transistor , light emitting diode , silicon , nanotechnology , electrical engineering , voltage , medicine , oceanography , alternative medicine , engineering , selenium , layer (electronics) , pathology , geology , metallurgy
At present, micro‐LED display, which inherit the high efficiency, the high Brightness, high reliability of OLED display, is one of the hottest and the most promising display techniques. i , ii , iii , iv The Indium selenide (In 2 Se 3 ) based transistor which possess a high gain and a short response times not only broader the potential applications in photo detector, but also provides a platform for high performance active addressing drive circuits of Micro‐LED displays. Here we reported an ultrathinIn 2 Se 3 thin film on silicon wafer and its fabrication process for field‐effect transistors. The In 2 Se 3 flakes was exfoliated by Scotch tape and then transferred to a SiO2/Si substrate to fabricate field‐effect transistors (FETs). Fig. 1 (a) shows the model of the devices are fabricated using cleaved In 2 Se 3 nanosheets on SiO2/Si substrates with the highly doped Si substrate used as the gate electrode. The Cr/Au was used as source/drain electrodes for the devices.