P‐9.6: Ultrathin Indium selenide (In 2 Se 3 ) thin films and field‐effect transistors for active matrix addressable Micro‐LEDs

At present, micro‐LED display, which inherit the high efficiency, the high Brightness, high reliability of OLED display, is one of the hottest and the most promising display techniques. i , ii , iii , iv The Indium selenide (In 2 Se 3 ) based transistor which possess a high gain and a short response times not only broader the potential applications in photo detector, but also provides a platform for high performance active addressing drive circuits of Micro‐LED displays. Here we reported an ultrathinIn 2 Se 3 thin film on silicon wafer and its fabrication process for field‐effect transistors. The In 2 Se 3 flakes was exfoliated by Scotch tape and then transferred to a SiO2/Si substrate to fabricate field‐effect transistors (FETs). Fig. 1 (a) shows the model of the devices are fabricated using cleaved In 2 Se 3 nanosheets on SiO2/Si substrates with the highly doped Si substrate used as the gate electrode. The Cr/Au was used as source/drain electrodes for the devices.