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P‐9.5: Flexible and vacuum‐free fabricated quantum dot‐light‐emitting diodes
Author(s) -
Su Sikai,
Huang Zijing,
Chen Shuming
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12811
Subject(s) - fabrication , optoelectronics , materials science , quantum dot , diode , electrode , light emitting diode , pressing , sheet resistance , electrical conductor , equivalent series resistance , nanotechnology , layer (electronics) , electrical engineering , composite material , chemistry , voltage , medicine , alternative medicine , pathology , engineering
Flexible quantum dotlight‐emitting diodes (QLEDs) are demonstrated by using hot‐pressing AgNWs as the transparent conductive electrode and EGaIn as the back electrode. Both AgNWs and EGaIn are printable, and thus the whole device can be fabricated via vacuum‐free processes. The hot‐pressing AgNWs electrode exhibits excellent physical characteristics such as high transparency of 96.7% in the visible spectral region, and low sheet resistance of 28 Ω/sq. With the AgNWs and EGaIn, vacuum‐free‐fabricated QLEDs are successfully achieved with efficiency 13.2cd/A. Because of the elimination of the costly vacuum processes, the proposed fabrication processes are low cost and allow rapid fabrication of flexible QLEDs with high performance.