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P‐9.2: GaN HEMT‐LED Homogeneous Integration for Micro‐LED Mass Transferring
Author(s) -
Liu Yibo,
Wei Feng,
Lu Tao,
Liu Zhaojun
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12808
Subject(s) - high electron mobility transistor , optoelectronics , pixel , light emitting diode , transistor , materials science , electrical engineering , semiconductor , process (computing) , computer science , electronic engineering , engineering , voltage , computer vision , operating system
Mass transfer is transferring a number of Micro‐LED pixels from the original substrate to target backplane, which aims to provide electrical connection and mechanical support for Micro‐LED pixels. Mass transfer technology plays a crucial role in Micro‐LED displays. For Micro‐LED displays larger than 2 inches, such as mobile phone and camera (2∼7 inches), Pad and Laptop (7∼15 inches), television (larger than 15 inches), mass transfer is a significant process in fabrication process. Unfortunately, mass transfer has become a bottleneck restricting the development of the Micro‐LED commercialization. There are many technology routes to solve (or to avoid) the problem of mass transfer. In this experiment, we review several methods of GaN HEMT‐LED monolithic integration to provide better electrical connection and mechanical support of Micro‐LEDs. As the third‐generation semiconductor, then we choose a model to do simulation by using Silvaco. GaN can be used as high‐quality LED and HEMT, especially the mobility of GaN HEMT is more than 2000cm2/V. S, which higher hundreds of times than Si transistor or TFT (Thin Film Transistor). HEMT‐LED monolithic integration can greatly improve the driving performance, save pixel area, improve pixel density, but also can avoid the problem of electrical connection in the mass transfer.