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P‐6.2: Recent Development on CI Layer Film Deposition Residue Debug
Author(s) -
Yang Yihui,
Sun Xiaoqi,
Xu Zhenqi,
Zang Yu,
Chen Hao,
Wei Bo,
Cheng Baolong
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12793
Subject(s) - materials science , capacitor , leakage (economics) , chemical vapor deposition , layer (electronics) , thin film transistor , optoelectronics , thin film , nanotechnology , electrical engineering , engineering , voltage , economics , macroeconomics
As the Capacitor insulation, the quality of CI film plays an important role in the drive circuit. However, the traditional plasma enhanced chemical vapor deposition method can cause broken particle and film. It may further result in the leakage of capacitor and VDD signal writing to drive TFT grid may caused the dark spot. As a result of greatly reducing the particle during CI layer thin film deposition by delaying special gasthe risk of product yield loss and reliability reduction which the residual film may cause has been decreased.