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P‐1.14: The Influence of Dual‐channel on the Performance of Self‐Align Top‐Gate IGZO Thin Film Transistors
Author(s) -
Deng Xuan,
Zhang Xiaodong,
Liang Ting,
Zhou Xiaoliang,
Zhang Shengdong
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12782
Subject(s) - thin film transistor , materials science , threshold voltage , optoelectronics , transistor , sputtering , amorphous solid , wafer , indium , layer (electronics) , thin film , voltage , nanotechnology , electrical engineering , chemistry , engineering , organic chemistry
In this work, fully transparent dual‐layer channel self‐aligned top‐gate amorphous indium gallium zinc oxide thin‐film transistors (a‐IGZO TFTs) are fabricated on glass substrates. Dual‐layer channel is consist of indium gallium zinc oxide with different partial pressure of oxygen while sputtering. An oxygen‐rich IGZO was deposited to control the threshold voltage and an oxygen‐poor IGZO was then deposited to modulate device mobility. The device exhibited the excellent performances, including: a field effect mobility of 5.33 cm 2 /Vs, a suitable threshold voltage of 1.68V, a sub‐threshold swing of 0.54V/dec and a high on/off current ratio. Furthermore, the devices also shows great stability under bias stress.