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P‐1.11: A Compact Model of Current and Capacitance for Amorphous Indium Gallium Zinc Oxide Thin‐Film Transistors
Author(s) -
Zhuang Feng,
Wei Xixiong,
Li Na,
Zhou Zheng,
Deng Wanling
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12779
Subject(s) - thin film transistor , materials science , optoelectronics , amorphous solid , capacitance , transistor , current (fluid) , active matrix , indium , gallium , electronic engineering , electrical engineering , nanotechnology , voltage , electrode , engineering , metallurgy , chemistry , organic chemistry , layer (electronics)
In recent years, amorphous indium gallium zinc oxide (a‐IGZO) thin‐film transistors (TFTs) have shown outstanding performance in flexible circuit applications, active matrix display and so on. Therefore, they will play an increasingly important role in the future of electronic applications. At the same time, an analytical model that predicts the electrical characteristics of IGZO TFTs is also critical. In this paper, we present a current and capacitance compact model of a‐IGZO TFTs. The compact model can be applied to different channel lengths for a‐IGZO TFTs. Besides, it is capable of capturing device characteristics and of maintaining high computational efficiency. Its accuracy is validated through the extensive comparisons between model results and experimental data.