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P‐1.9: Characterization of Self‐Aligned Top‐Gate Microcrystalline Silicon Thin Film Transistors
Author(s) -
Zhang Meng,
Yan Yan,
Deng Sunbin,
Zhou Wei,
Chen Rongsheng,
Wong Man,
Kwok Hoi-Sing
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12777
Subject(s) - materials science , thin film transistor , optoelectronics , silicon , microcrystalline , microcrystalline silicon , transistor , doping , nanotechnology , electrical engineering , layer (electronics) , crystallography , amorphous silicon , crystalline silicon , chemistry , engineering , voltage
Self‐aligned top‐gate microcrystalline silicon (µc‐Si) thin film transistors (TFTs) are fabricated and characterized. By replacing high‐temperature SiO 2 with low‐temperature SiO 2 , the performance of self‐aligned top‐gate µc‐Si TFTs can be greatly improved due to the prevention of hydrogen diffusion into the air. The bridged grain (BG) structure is successfully applied to self‐aligned top‐gate µc‐Si TFTs for the first time. By employing the BG doping inside the channel, all device characteristics are improved in self‐aligned top‐gate µc‐Si TFTs.