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P‐1.5: Edge Effects of Three‐Mask Elevated‐Metal Metal‐Oxide Thin‐Film Transistor and Their Elimination
Author(s) -
Li Jiapeng,
Lu Lei,
Xia Zhihe,
Wang Sisi,
Kwok Hoi-Sing,
Wong Man
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12773
Subject(s) - passivation , materials science , enhanced data rates for gsm evolution , layer (electronics) , transistor , metal , oxide , thin film transistor , optoelectronics , etching (microfabrication) , electrical engineering , nanotechnology , metallurgy , computer science , engineering , voltage , telecommunications
Based on the self‐aligned definition of the active island of a reduced‐mask elevated‐metal metal‐oxide thin‐film transistor with thermally‐induced source/drain regions, the potential issue of the insufficient passivation of the width‐wise edges of the channel has been investigated by varying the thickness of the etch‐stop layer thickness. A thinner etch‐stop layer ensured a better coverage of the edges by the passivation layer, hence eliminating the effects of the parasitic edge‐transistors.