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P‐1.4: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Fluorinated Indium‐Gallium‐Zinc Oxide Channel towards Flexible Applications
Author(s) -
Wang Sisi,
Lu Lei,
Li Jiapeng,
Xia Zhihe,
Kwok Hoi Sing,
Wong Man
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12772
Subject(s) - materials science , thin film transistor , zinc , oxide , gallium , indium , fabrication , metal , optoelectronics , transistor , nanotechnology , metallurgy , electrical engineering , layer (electronics) , engineering , medicine , alternative medicine , pathology , voltage
Towards to the requirements of the low processing temperature for the flexible application, elevated‐metal metal oxide (EMMO) thin‐film transistors with fluorinated indium‐gallium‐zinc oxide (IGZO) channel were fabricated at the highest temperature of 300°C. The effect of V on dependence on channel length was reduced in the fluorinated channel. And the V on of the devices, especially for the short channel with L=2µm, are improved by this fluorination treatment. The results show that the short time plasma treatment is an effective method to decrease the thermal budget and enhance scalability in the flexible application fabrication.