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P‐1.3: The conductivity modulation of amorphous zinc tin oxide thin film by Ar plasma treatment
Author(s) -
Wang Gang,
Chang Baozhu,
Wang Shenglei,
Zhang Shengdong
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12771
Subject(s) - materials science , amorphous solid , tin , annealing (glass) , sheet resistance , electrical resistivity and conductivity , plasma , thin film , zinc , tin oxide , plasma enhanced chemical vapor deposition , conductivity , analytical chemistry (journal) , oxide , layer (electronics) , composite material , metallurgy , nanotechnology , chemistry , electrical engineering , crystallography , physics , quantum mechanics , engineering , chromatography
We propose a method to form low‐resistance amorphous zinc tin oxide thin film (a‐ZTO) by Ar plasma. The results show that the Ar plasma treatment can effectively decrease the resistivity of the a‐ZTO. The ZTO film treated with Ar plasma at suitable time and moderate operating power, exhibits a low sheet resistance of 2.3 kΩ/□. With the help of PECVD‐SiO x coverage layer, the sheet resistance of Ar‐plasam treated ZTO is enhanced and increases only one order of magnitude after annealing at 230 °C. As a result, an optimized Ar plasma treatment for fabrication of low‐resistance a‐ZTO film is presented.