P‐1.1: Anomalous Dependence of Threshold Voltage on Channel Width and Drain Voltage in Back‐channel‐etched a‐IGZO TFTs

The back‐channel‐etched (BCE) amorphous InGaZnO thin‐film transistors with different channel widths (Ws) are fabricated. The performance of V TH depends on both channel width (W) and drain voltage (V D ) in this work. It is shown that neither W nor V D can create influence in V TH when W or V D is relatively small. However, when both W and V D are large enough, there will be an anomalous phenomenon that V TH increases with the increasing W or the increasing V D . The self‐heating effect can be used to account for this anomalous dependence of V TH on W and V D .