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P‐1.1: Anomalous Dependence of Threshold Voltage on Channel Width and Drain Voltage in Back‐channel‐etched a‐IGZO TFTs
Author(s) -
Yang Huan,
Zhou Xiaoliang,
Zhang Shengdong
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12769
Subject(s) - thin film transistor , threshold voltage , channel (broadcasting) , materials science , amorphous solid , drain induced barrier lowering , voltage , transistor , optoelectronics , channel length modulation , overdrive voltage , condensed matter physics , electrical engineering , physics , chemistry , nanotechnology , crystallography , layer (electronics) , engineering
The back‐channel‐etched (BCE) amorphous InGaZnO thin‐film transistors with different channel widths (Ws) are fabricated. The performance of V TH depends on both channel width (W) and drain voltage (V D ) in this work. It is shown that neither W nor V D can create influence in V TH when W or V D is relatively small. However, when both W and V D are large enough, there will be an anomalous phenomenon that V TH increases with the increasing W or the increasing V D . The self‐heating effect can be used to account for this anomalous dependence of V TH on W and V D .