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49.2: Invited Paper: Research and Applications of Amorphous Metal‐Oxide Semiconductor Devices ‐ In‐Ga‐Zn‐O and Ga‐Sn‐O Thin‐Film Devices ‐
Author(s) -
Kimura Mutsumi,
Kamiya Toshio,
Matsuda Tokiyoshi,
Umeda Kenta,
Fukawa Asuka,
Nakashima Yasuhiko
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12768
Subject(s) - materials science , optoelectronics , thin film transistor , amorphous solid , sputtering , semiconductor , thin film , electronic engineering , nanotechnology , layer (electronics) , engineering , crystallography , chemistry
IGZO TFTs are analyzed, and GTO devices are introduced as rare metal free devices. GTO TFTs are made by simple sputtering, and the performance is excellent, such as, mobility=34.6 cm 2 /Vs, good stability, etc. We propose applications of IGZO and GTO devices to not only FPDs but also thermoelectric and neuromorphic devices.