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42.2: Photolithographic Patterning of Short Channel Organic TFTs for Displays
Author(s) -
Jeon Jaekwon,
Li Xiuling,
Choi Jonghyun,
He Mingqian,
Manley Robert,
Chang Jaemyung,
Zhelev Nikolay,
Mehrotra Karan,
Jang Jin
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12754
Subject(s) - materials science , optoelectronics , channel (broadcasting) , photolithography , thin film transistor , nanotechnology , computer science , layer (electronics) , telecommunications
We report high‐performance organic TFTs with short channel length (L) of 6 µm. The OTFTs employ a bottom‐gate, bottom‐contact structure, with all layers patterned by conventional photolithographic methods. A field effect mobility of ∼0.45 cm 2 /V·s, and the on‐to‐off current ratio of ∼10 6 were obtained in the fabricated p‐channel OTFTs. The short channel OTFT with excellent performance is promising for flexible, high‐resolution displays.