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30.1: Transparent Basic Logic Circuits with ITO‐Stabilized ZnO Thin Film Transistors
Author(s) -
Xu Yuming,
Wu Zhaohui,
Deng Sunbin,
Qin Yuning,
Zhong Wei,
Chen Rongsheng,
Li Bin,
Wong Man,
Kwok Hoi Sing
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12715
Subject(s) - materials science , optoelectronics , cmos , inverter , thin film transistor , electronic circuit , transistor , ring oscillator , electrical engineering , logic gate , electronic engineering , voltage , layer (electronics) , nanotechnology , engineering
Transparent basic logic circuits integrated by indium tin oxide(ITO)‐stabilized ZnO thin film transistors(TFTs) are successfully fabricated on glass substrate. ITO‐stabilized ZnO thin films with hybrid‐phase microstructure are employed as active layers in the bottom‐contact top‐gated TFTs. We fabricate 13‐stages ring oscillator (RO) with diode‐load and pseudo‐CMOS inverter respectively in order to tell the difference between those two schemes. The pseudo‐CMOS RO exhibits 7V voltage swing and 42kHz oscillation frequency while the diode‐load RO exhibiting 3.3V and 71kHz under the same supply voltage of 20V. Meanwhile, basic digital circuits like NOR gates and D flip flops with pseudo‐CMOS scheme are also fabricated and they are logically correct. Those logic gates exhibit a typical high level of 4.3V, low level of 200mV and maximum operating frequency of nearly 10kHz under the 10V supply voltage. The transmittance of the chip is 80% to 90% in a 380‐nm to 800‐nm wavelength.