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25.1: Invited Paper: Quantum dots based full‐color display on micro‐light‐emitting‐diode technology
Author(s) -
LIN CHIH-HAO,
LEE CHUN-FU,
LIN CHIEN-CHUNG,
CHU CHEN-HSIEN,
SHER CHIN-WEI,
LIU ZHAO-JUN,
KUO HAO-CHUNG
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12698
Subject(s) - quantum dot , optoelectronics , materials science , photoresist , light emitting diode , optics , color rendering index , gamut , laser linewidth , laser , nanotechnology , physics , layer (electronics)
In this study, we would like to demonstrate a quantum‐dot (QD)‐based full‐color emission red‐green‐blue (RGB) micro‐light‐emitting‐diode (micro‐LED) array with the reduced optical cross‐talk effect by a photoresist mold method. The UV micro‐LED array is used as an efficient excitation source for the QDs. The aerosol jet technique provides a narrow linewidth on the micrometer scale for a precise jet of QDs on the micro‐LEDs. In order to reduce the optical cross‐talk effect, a simple lithography method and photoresist are used to fabricate the mold, which consists of a window for QD jetting and a blocking wall for cross‐talk reduction. The cross‐talk effect of the well‐confined QDs in the window is confirmed by a fluorescence microscope, which shows clear independence QD pixels. A distributed Bragg reflector is covered on the micro‐LED array and the QDs’ jetted mold to further increase the reuse of UV light. The enhanced light emission of the QDs is 5%, 32%, and 23% for blue, green, and red QDs, respectively.