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17.5: Fabrication of CdSe/ZnS Quantum Dot Color Filters via Photolithography Process
Author(s) -
Zhao Bingxin,
Lu Rui,
Hao Junjie,
Li Shang,
Bai Xue,
Wang Liduo,
Wang Kai,
Sun Xiao Wei
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12678
Subject(s) - photolithography , photoresist , quantum dot , fabrication , quantum yield , ligand (biochemistry) , materials science , optoelectronics , nanotechnology , photochemistry , fluorescence , chemistry , optics , physics , medicine , alternative medicine , pathology , biochemistry , receptor , layer (electronics)
Quantum dots color filter (QDCF) is potential to be a game‐changer for display and micro LED industry. In this paper, highly fluorescent QDCF have been prepared by changing surface active ligand of CdSe@ZnS to nonreactive ligand for photolithographic patterning. The quantum dots (QDs) with inactivated ligand avoids chemical reaction during the photolithography process. The 4 μm thickness QDCF with 28.8% (red) absolute PL quantum yield (λ max of 630.16 nm) has been achieved after the photolithograpy process, while the QDs with surface active sites failed to form a patterned film. This may be due to the coordination of activated bonds with photoresist and the occurrence of complexation reaction.

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