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17.3: Black Photoresist Achieving Patterns with Extremely Low Reflection and Smooth Line Edge
Author(s) -
Igawa Akihiko
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12676
Subject(s) - photoresist , reflection (computer programming) , enhanced data rates for gsm evolution , optics , materials science , line (geometry) , light scattering , diffuse reflection , scattering , matrix (chemical analysis) , optoelectronics , surface (topology) , reflectivity , computer science , nanotechnology , composite material , physics , geometry , artificial intelligence , mathematics , layer (electronics) , programming language
This paper introduces a new type of black photoresist with a very low reflectance and very smooth pattern line edge that doesn't require adding micron‐size particles. Combinations of poor solvent, good solvent, and selected special substances as solutes in the black photoresist can achieve matte surface during drying process. Because particles are not used to achieve matte surface, the line edge will be very smooth. This photoresist is likely appropriate for applications where light reflection or light scattering should be avoided, such as black matrix and smartphone camera surroundings.