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28‐4: Design of High Reliability a‐Si:H TFT Gate Driver with Threshold Voltage Compensation on TFT‐LCD Application
Author(s) -
Liu Po-Tsun,
Zheng Guang-Ting
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12573
Subject(s) - thin film transistor , reliability (semiconductor) , compensation (psychology) , electrical engineering , materials science , noise (video) , transistor , capacitance , electronic engineering , threshold voltage , optoelectronics , voltage , engineering , computer science , electrode , layer (electronics) , power (physics) , psychology , physics , image (mathematics) , quantum mechanics , artificial intelligence , psychoanalysis , composite material , chemistry
A hydrogenated amorphous silicon (a‐Si:H) thin‐film transistor(TFT) gate driver on array (GOA) with threshold voltage compensation at the low level holding TFT and full time noise‐free for maintaining the high reliability has been proposed. The full‐time noise‐free part consists of an compensation circuit block and an pull down TFT with clock signal controlled. The method of threshold voltage compensation is the charge storage of capacitance with stress imitation TFT. Also, using single path for both charging and discharging with capacitive anti‐noise block can efficiently resist noise signal and diminish the using area The proposed gate driver has been successfully processed and the measurement result is fit on simulation. Moreover, the proposed circuit design has passed 800 hours reliability test at high temperature and 4200 lux back‐light with less degrade of performance.