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28‐1: A Robust Bidirectional Gate Driver on Array with Oxide TFTs
Author(s) -
Wang Zhichong,
Zheng Haoliang,
Han Seungwoo,
Shang Guangliang,
Yuan Lijun,
Han Mingfu,
Yao Xing,
Shi Dawei,
Im Yunsik,
Chen Xiaochuan,
Huang Yinglong
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12570
Subject(s) - robustness (evolution) , reliability (semiconductor) , gate oxide , threshold voltage , gate driver , computer science , voltage , leakage (economics) , electronic engineering , materials science , electrical engineering , engineering , transistor , chemistry , physics , biochemistry , power (physics) , quantum mechanics , gene , macroeconomics , economics
A novel bidirectional gate driver on array using oxide technology is proposed to reduce abnormal driving risk caused by threshold voltage shifts in TFTs. The robustness of the proposed circuit is verified by simulation and reliability test results.