26‐2: Extremely High‐Efficient OLED Achieving External Quantum Efficiency over 40% by Carrier Injection Layer with Super‐Low Refractive Index | Zendy

Watabe Takeyoshi | Zendy; Yamaoka Ryohei | Zendy; Ohsawa Nobuharu | Zendy; Tomida Airi | Zendy; Seo Satoshi | Zendy; Yamazaki Shunpei | Zendy

Premium

26‐2: Extremely High‐Efficient OLED Achieving External Quantum Efficiency over 40% by Carrier Injection Layer with Super‐Low Refractive Index

Author(s) -

Watabe Takeyoshi,

Yamaoka Ryohei,

Ohsawa Nobuharu,

Tomida Airi,

Seo Satoshi,

Yamazaki Shunpei

Publication year - 2018

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.12554

Subject(s) - oled , quantum efficiency , optoelectronics , materials science , refractive index , phosphorescence , diode , layer (electronics) , optics , fluorescence , physics , nanotechnology

Extremely low‐refractive‐index hole‐injection and electron‐injection layers were developed to improve the outcoupling efficiency of an organic light‐emitting diode (OLED). These layers enabled a remarkably high external quantum efficiency of 41% in a bottom‐emission phosphorescent OLED and also improved the current efficiency even in a top‐emission OLED with a microcavity structure.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research