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26‐2: Extremely High‐Efficient OLED Achieving External Quantum Efficiency over 40% by Carrier Injection Layer with Super‐Low Refractive Index
Author(s) -
Watabe Takeyoshi,
Yamaoka Ryohei,
Ohsawa Nobuharu,
Tomida Airi,
Seo Satoshi,
Yamazaki Shunpei
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12554
Subject(s) - oled , quantum efficiency , optoelectronics , materials science , refractive index , phosphorescence , diode , layer (electronics) , optics , fluorescence , physics , nanotechnology
Extremely low‐refractive‐index hole‐injection and electron‐injection layers were developed to improve the outcoupling efficiency of an organic light‐emitting diode (OLED). These layers enabled a remarkably high external quantum efficiency of 41% in a bottom‐emission phosphorescent OLED and also improved the current efficiency even in a top‐emission OLED with a microcavity structure.