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19‐3: Late-News Paper: Universal Method to Determine the Dynamic NBIS‐ and PBS‐induced Instabilities on Self‐aligned Coplanar InGaZnO Thin‐film Transistors
Author(s) -
Jang Jun Tae,
Yu Hye Ri,
Ahn Geumho,
Choi Sung-Jin,
Kim Dong Myong,
Kim Yong-Sung,
Oh Saeroonter,
Baeck Ju Heyuck,
Bae Jong Uk,
Park Kwon-Shik,
Yoon Soo Young,
Kang In Byeong,
Kim Dae Hwan
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12538
Subject(s) - thin film transistor , materials science , optoelectronics , illuminance , backplane , transistor , amorphous solid , instability , nanotechnology , electrical engineering , optics , physics , engineering , crystallography , chemistry , mechanics , layer (electronics) , voltage
The method for dynamically calculating the NBIS‐ and PBS‐induced ΔV T 's is proposed based on experimentally extracted density‐of‐states and is demonstrated in top‐gate self‐aligned coplanar amorphous InGaZnO thin‐film transistors. The effect of illuminance as well as the bias‐dependence is successfully taken into account. Proposed method is potentially useful for the instability‐aware design of OLED display backplanes.