Premium
12‐4: Late-News Paper: Reliability Improvement of IGZO and LTPS Hybrid TFTs Array Technology
Author(s) -
Ye Jia-Hong,
Huang Ching-Liang,
Chen Ming-Yao,
Hong Hao-Zhi,
Luo Ju-Chun,
Huang Kuo-Yu,
Peng Chia-Tien,
Chen Maw-Song,
Huang Wei-Ming,
Wu Yang-An
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12500
Subject(s) - materials science , reliability (semiconductor) , optoelectronics , thin film transistor , fabrication , liquid crystal display , stress (linguistics) , layer (electronics) , nanotechnology , power (physics) , medicine , linguistics , physics , alternative medicine , philosophy , quantum mechanics , pathology
We report fabrication processes of indium gallium zinc oxide (IGZO) and low temperature poly silicon (LTPS) hybrid TFTs array technology. And the SiOx/IGZO interface quality modification and the performance of different thickness of active layer of IGZO device has been investigated by positive gate bias temperature stress method. The optimum processes conditions have been used on the 1.4” inch circular LCD to improve and pass operation tests of high temperature operation (HTO) 274hrs and temperature‐humidity‐bias (THB) 462 hrs to reach mass production phase.