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5‐2: Gate Driver Circuits for Internal Compensation Type OLED Display with High Mobility Oxide TFT
Author(s) -
Kim Dae Hwan,
Koo Hyung Joon,
Kang Min-Gu,
Chun Kwang Il,
Choi Uyhyun,
Ko Younghyun,
Jeon Jeyong,
Jeong ChanYong,
Jang Yong Ho,
Bae Jong Uk,
Park Kwon-shik,
Yoon Soo Young,
Kang In Byeong
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12486
Subject(s) - thin film transistor , oled , materials science , compensation (psychology) , optoelectronics , threshold voltage , electronic circuit , voltage , electrical engineering , saturation (graph theory) , oxide thin film transistor , flat panel display , transistor , engineering , nanotechnology , psychology , mathematics , layer (electronics) , combinatorics , psychoanalysis
The self‐compensating pixel circuit and the gate driver are fabricated with high mobility (~50cm 2 /Vs) oxide TFTs. In order to improve operating margin against negative shift of V th in GIP circuit, the circuit utilizes two low‐voltage‐level signals. Also, the design of the EM driver to be controlled by the scan driver reduces the bezel size. Our 5.5‐in. FHD OLED display panel on PI substrate shows good uniformity and long‐term stability with saturation behavior of clamping voltage in GIP circuit under operation at 60°C for over 1,000 hours.