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4‐3: Solution Synthesis of High‐Quality Indium‐Nitride Quantum Dots
Author(s) -
Nagakubo Junki,
Hirakawa Masaaki,
Sawada Takahiro,
Nishihashi Tsutomu,
Horita Kazumasa,
Murakami Hirohiko
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12483
Subject(s) - quantum dot , indium , nanocrystal , indium nitride , photoluminescence , nitride , materials science , nanotechnology , nanoparticle , quality (philosophy) , optoelectronics , physics , quantum mechanics , layer (electronics)
Group III‐nitride nanocrystals are promising candidates for lighting applications. However, development of their colloidal quantum dots (QDs) has not progressed because of issues with the synthesis of indium nitride (InN) nanoparticles, such as the long reaction time and the generation of indium metal as a by‐product. Here, we propose a new synthetic method that can solve almost all of the above problems and improve the quality of InN nanocrystals. In addition, we demonstrate that Ga—In—N QDs and Zn—In—N QDs synthesized using the proposed method exhibit photoluminescence.