Premium
4‐1: Invited Paper: Role of Phosphorus Oxidation in Controlling the Luminescent Properties of Indium Phosphide Quantum Dots
Author(s) -
Cossairt Brandi M.,
Stein Jennifer L.,
Holden William M.,
Seidler Gerald T.
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12481
Subject(s) - indium phosphide , quantum dot , photoluminescence , selenide , indium , luminescence , spectroscopy , quantum yield , materials science , phosphide , cadmium selenide , optoelectronics , nanotechnology , photochemistry , chemistry , optics , physics , selenium , gallium arsenide , metal , metallurgy , quantum mechanics , fluorescence
Indium phosphide (InP) is the leading Cd‐free quantum dot material for application in photoluminescence downconversion display and lighting technologies. To date the performance of InP quantum dots (QDs) has lagged behind cadmium selenide in terms of both luminescence line width and quantum yield. Extensive studies in our lab have implicated kinetically persistent magic‐sized cluster intermediates as a leading contributor to polydispersity in these samples, providing new opportunities for achieving high color purity. Now, using a combination of solid‐state NMR spectroscopy and recently developed benchtop X‐ray emission spectroscopy, we have studied the evolution of oxidized phosphorus species during both synthesis and shell growth.