Premium
P‐189: The Technological Study for Side Etch about ITO Stacked OC Layer on Touch Panel
Author(s) -
Zeng Ting,
Shao Xibin,
guo Zongjie,
Zhang Ming,
Ding Xianlin,
Chen Qicheng,
Du Zhi,
Yin Liuyue,
qian Yijie,
Zhang Yuzhao,
Yang Hong
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12439
Subject(s) - sputtering , layer (electronics) , materials science , reliability (semiconductor) , optoelectronics , electrode , composite material , power (physics) , thin film , nanotechnology , chemistry , physics , quantum mechanics
The paper is mainly studied that side etch has the relation with ITO stacked OC layer on touch panel; And OC is served as insulating layer used between the electrode of Tx and Rx, the compactness of ITO film has the important influence on temperature and high humidity reliability evaluation. The result is product reliability. The issue of side etch would be electrical disconnection, as to the product work not properly in high suggested that main factors of side etch were the choice of OC materials, and ITO sputtering technique, in addition to the thickness, but can't be improved thoroughly only from optimizing OC materials. Therefore, ITO process, sputtering temperature and depositing power, improved completely the issue of side etch on OC.