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52‐4: Laser‐Enabled Extremely‐High Rate Technology for µLED Assembly
Author(s) -
Marinov Val R.
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12352
Subject(s) - wafer , light emitting diode , materials science , optoelectronics , laser , process (computing) , transfer (computing) , quartz , computer science , optics , physics , composite material , operating system , parallel computing
We developed a complete wafer‐to‐panel technology for extremely high rate assembly of µLEDs. The process involves transferring the µLEDs directly from the source epi‐wafer to a quartz carrier from where they are selectively transferred to the panel using our Laser‐Enabled Massively Parallel Transfer method with >100M units/hr.
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