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57‐2: Scalable Crystallization of a‐Si Film on a Glass Substrate by Using a Blue Laser
Author(s) -
Park Minok,
Hong Seungpyo,
Jung Y.H.,
Lee Suhui,
Rho Yoonsoo,
Park H. K.,
Grigoropoulos Costas P.,
Jang Jin
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12345
Subject(s) - materials science , crystallization , annealing (glass) , amorphous solid , laser , thin film , optoelectronics , raman spectroscopy , thin film transistor , atomic force microscopy , chemical engineering , composite material , optics , nanotechnology , crystallography , chemistry , physics , layer (electronics) , engineering
A continuous‐wave blue laser annealing (BLA) system (λ ~ 440 nm) is applied to delineate the physical phenomenon of low‐temperature crystallization from amorphous Si (a‐Si) thin film to poly‐Si film on glass substrates for potential industrial application. At various scanning speeds and laser intensities, crystallization mechanism of BLA has been studied. It shows that BLA can achieve high quality, smooth poly‐Si film with laterally grown grains with sizes of 4×10 µm, as studied by optical microscopy, Raman spectroscopy, and AFM. The p‐channel poly‐Si TFT on glass exhibited the field‐effect mobility of 120.82 cm 2 /Vs and subthreshold swing of 284mV/dec. Therefore, it proves that BLA can substitute conventional annealing processes as a reliable, scalable, and economical tool.