Premium
50‐3: Formation of Source and Drain Regions in Top‐Gate Self‐Aligned Oxide Semiconductor Field‐Effect Transistor
Author(s) -
Okazaki Kenichi,
Obonai Toshimitsu,
Shima Yukinori,
Yasumoto Seiji,
Koezuka Junichi,
Ishihara Noritaka,
Kurosawa Yoichi,
Yamazaki Shunpei
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12333
Subject(s) - materials science , optoelectronics , transistor , stack (abstract data type) , field effect transistor , oxide , semiconductor , silicon , silicon nitride , nitride , indium , metal , nanotechnology , layer (electronics) , electrical engineering , computer science , engineering , voltage , metallurgy , programming language
Formation of source and drain regions in a top‐gate self‐aligned field‐effect transistor and its mechanism were examined. A stack structure of silicon nitride and an oxide semiconductor (OS) is effective, and hydrogen trapped in oxygen vacancies in the OS and the presence of metallic indium at the interface are important.