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P‐138: A High Sensitive Resistive Pressure Sensor with NH 4 HCO 3 ‐induced Porous Structure Active Layer
Author(s) -
Pan Jin,
Liu Shiyu,
Yang Yicheng,
Lu Jiangang
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12328
Subject(s) - materials science , piezoresistive effect , resistive touchscreen , porosity , pressure sensor , high pressure , elasticity (physics) , layer (electronics) , high resistance , composite material , linearity , sensitivity (control systems) , flexibility (engineering) , optoelectronics , electrical engineering , electronic engineering , engineering , engineering physics , mechanical engineering , agronomy , statistics , mathematics , biology
A facile approach to achieve high sensitive piezoresistive pressure sensor is proposed. By introducing NH4HCO3 to produce porous structures in the PSR‐layer (Pressure sensor rubber), sensor shows high flexibility and elasticity. The resistance increases with external stress. Sensitivity reaches 0.8kPa‐1 under the pressure of 0–25kPa, with high linearity and stability.