P‐111: Black Photoresist Bank for Inkjet‐Printed Quantum Dot Light‐Emitting Diodes | Zendy

Ko Donghyun | Zendy; Han Jongseok | Zendy; Roh Heebum | Zendy; Park Yeseul | Zendy; Lee Jiwon | Zendy; Kim Juho | Zendy; Kim Hunsik | Zendy; Kim Hyungjoo | Zendy; Lee Jongsoo | Zendy; Bae Wan Ki | Zendy; Lee Changhee | Zendy

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P‐111: Black Photoresist Bank for Inkjet‐Printed Quantum Dot Light‐Emitting Diodes

Author(s) -

Ko Donghyun,

Han Jongseok,

Roh Heebum,

Park Yeseul,

Lee Jiwon,

Kim Juho,

Kim Hunsik,

Kim Hyungjoo,

Lee Jongsoo,

Bae Wan Ki,

Lee Changhee

Publication year - 2018

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.12294

Subject(s) - photoresist , quantum dot , optoelectronics , diode , photolithography , light emitting diode , materials science , nanotechnology , layer (electronics)

We demonstrated a bank structure for inkjet‐printed quantum dot light‐emitting diodes (QLEDs) fabricated through photolithography process using black photoresist (B‐PR). The B‐PR banks have low surface energy (13 mJ m −2 ), resulting in well confined quantum dot (QD) ink inside the pixel area. Based on the B‐PR bank structure, we demonstrated a QLED with 0.20 % of external quantum efficiency.

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