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P‐111: Black Photoresist Bank for Inkjet‐Printed Quantum Dot Light‐Emitting Diodes
Author(s) -
Ko Donghyun,
Han Jongseok,
Roh Heebum,
Park Yeseul,
Lee Jiwon,
Kim Juho,
Kim Hunsik,
Kim Hyungjoo,
Lee Jongsoo,
Bae Wan Ki,
Lee Changhee
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12294
Subject(s) - photoresist , quantum dot , optoelectronics , diode , photolithography , light emitting diode , materials science , nanotechnology , layer (electronics)
We demonstrated a bank structure for inkjet‐printed quantum dot light‐emitting diodes (QLEDs) fabricated through photolithography process using black photoresist (B‐PR). The B‐PR banks have low surface energy (13 mJ m −2 ), resulting in well confined quantum dot (QD) ink inside the pixel area. Based on the B‐PR bank structure, we demonstrated a QLED with 0.20 % of external quantum efficiency.