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P‐110: Efficient InP‐based Quantum Dot Light Emitting Diodes utilizing a Crosslinkable Hole Transport Layer
Author(s) -
Kim Yohan,
Heyne Benjamin,
Geßner André,
Park Yongwook,
Kang Moonsung,
Ahn Seonhong,
Lee Bumsung,
Wedel Armin
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12293
Subject(s) - quantum dot , optoelectronics , light emitting diode , materials science , layer (electronics) , diode , surface roughness , quantum efficiency , surface finish , nanotechnology , composite material
We demonstrate efficient InP‐based quantum dot (QD) LEDs utilizing a crosslinkable hole transport layers (HTL). The developed HTL exhibit great solvent resistance and smooth surface roughness. The influence of QD design, HTL structure as well as the corresponding processing of these materials on device performance was investigated.