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P‐108: Positive Aging Mechanisms for High‐efficiency Blue Quantum Dot Light‐emitting Diodes
Author(s) -
Ding Wen-Cheng,
Chen Chia-Hsun,
Huang Li-Jen,
Kuo Ming-Cheng,
Kuo Ya-Pei,
Chen Peng-Yu,
Lu Hsueh-Hsing,
Lin Yu-Hsin,
Tierce Nathan,
Bardeen Christopher J.,
Lee Jiun-Haw
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12292
Subject(s) - optoelectronics , quantum dot , materials science , diode , light emitting diode , layer (electronics) , quantum efficiency , nanotechnology
Voltage reduction (2.4 V at 2 mA/cm 2 ) and efficiency improvement (7‐times) were demonstrated in blue QLEDs by positive aging process, which came from (1) improvement of carrier injection at ZnO/QD interface and/or carrier transport in QD layer, and (2) enhancement of PLQY of QD emissive layer.